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| SMD Type MOS Field Effect Transistors 2SJ360 SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 MOSFET Unit: mm +0.1 1.50-0.1 Features +0.1 2.50-0.1 RDS(on)=0.55 (VGS=-4V,ID=-1.0A) Low leakage current :IDSS=-100 A Max.)(VDS=-60V) +0.1 0.80-0.1 High forward transfer admittance :|Yfs|=0.9S(Typ.) 1 +0.1 0.48-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 Low on-state resistance +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 -1 -3 0.5 150 -55 to +150 Unit V V A A W www.kexin.com.cn 1 SMD Type 2SJ360 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Contimuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDSS IGSS Vth Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IDR IDRP VDSF trr Qrr IDR=-1A,VGS=0V IDR=-1A,VGS=0V,di/dt=50A/ s VGS=-10V,ID=-1A,VDD=-48V VGS(on)=-10V,VDD=-30V,ID=--0.5A RL=60 VDS=-10V,VGS=0,f=1MHZ Testconditons VDS=-60V,VGS=0 VGS= 16V,VDS=0 -0.8 0.5 0.9 Min MOSFET Typ Max 100 10 -2.0 Unit A A V S VDS=-10V,ID=-1mA VDS=-10V,ID=-0.5A VGS=-4V,ID=-0.5A VGS=-10V,ID=-0.5A 0.86 0.55 155 20 75 20 17 100 20 6.5 4.5 2.0 1.2 0.73 pF pF pF ns ns ns ns nC nC nC -1 -3 1.7 50 50 A A V ns c Marking Marking Z8 2 www.kexin.com.cn |
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